ELECTRON-MICROSCOPY STUDIES OF PULSED ELECTRON-BEAM ANNEALING IN PHOSPHORUS-IMPLANTED SILICON

被引：4
|
作者：
THOLOMIER, M [1 ]
PITAVAL, M [1 ]
AMBRI, M [1 ]
BARBIER, D [1 ]
LAUGIER, A [1 ]
机构：
[1] INST NATL SCI APPL LYON, PHYS MAT LAB, F-69621 VILLEURBANNE, FRANCE
来源：
JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期
关键词：
D O I：
10.1063/1.332142
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1588 / 1594
页数：7
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