DENSITY OF TRAP TUNNELING STATES IN DIFFUSED PBS1-XSEX P-N-JUNCTIONS

被引：0
|
作者：
HOERSTEL, W
机构：
[1] Humboldt-Univ zu Berlin, Berlin, East Ger, Humboldt-Univ zu Berlin, Berlin, East Ger
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1986年 / 95卷 / 01期
关键词：
D O I：
10.1002/pssa.2210950145
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SEMICONDUCTOR DEVICES
引用
收藏
页码：361 / 366
页数：6
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