INVESTIGATION OF DEFECTS IN AMORPHOUS SELENIUM BY VISCOSIMETRY IN ELECTRIC-FIELDS - RESONANCE PHENOMENON AND THE IMPURITIES INFLUENCE

被引：1

作者：

DEMBOVSKY, SA

CHECHETKINA, EA

KOZYUKHIN, SA

机构：

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 44卷 / 12期

关键词：

D O I：

10.1016/0038-1098(82)90678-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1561 / 1564

页数：4

共 50 条

[1] THE EXPERIMENTAL-OBSERVATION AND INVESTIGATION OF DEFECTS IN GLASS FORMING SUBSTANCES WITH SELENIUM AS AN EXAMPLE BY VISCOSIMETRY IN MAGNETIC AND ELECTRIC-FIELDS
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[2] HOLE PHOTOGENERATION IN AMORPHOUS SELENIUM AT LOW ELECTRIC-FIELDS
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[3] INFLUENCE OF MAGNETIC AND ELECTRIC-FIELDS ON ABSORPTION OF LIGHT BY DEEP IMPURITIES
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[4] IMPACT IONIZATION AND MOBILITIES OF CHARGE-CARRIERS AT HIGH ELECTRIC-FIELDS IN AMORPHOUS SELENIUM
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[5] INFLUENCE OF ELECTRIC-FIELDS ON ORGANISMS
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[6] EFFECT OF ELECTRIC-FIELDS OF LATTICE DEFECTS ON SHAPE AND WIDTH OF PARAELECTRIC RESONANCE LINES
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[7] RESONANCE PHENOMENA AND DEFECTS IN AMORPHOUS SELENIUM
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[8] SPIN REFRIGERATOR FOR PARAMAGNETIC IMPURITIES USING ELECTRIC-FIELDS
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[9] INVESTIGATION OF THE DRIFT OF DEFECTS IN CDS-LI CRYSTALS SUBJECTED TO ELECTRIC-FIELDS
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[10] INFLUENCE OF IMPURITIES ON CARRIER MOBILITY IN AMORPHOUS SELENIUM
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SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (04): : 905 - +

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