SPATIALLY-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY OF LATERAL P-N-JUNCTIONS PREPARED BY SI-DOPED GAAS USING A PHOTON SCANNING TUNNELING MICROSCOPE

An accurate correspondence between the local optical responses and the structures of semiconductor light-emitting devices is demonstrated by using an illumination-mode photon scanning tunneling microscope with noncontact atomic force microscope technique. We study the novel-structured lateral p-n junctions grown on patterned GaAs(111)A substrate. Measuring the spatially resolved photoluminescence spectra with a 200 nm apertured probe, we precisely determine the position and the width of the transition region of p-n junctions. The illumination-collection hybrid mode is also employed to map the two-dimensional emission efficiency with higher resolution, which is not affected by carrier diffusion. (C) 1995 American Institute of Physics.