GROWTH OF CARBON-DOPED P-TYPE INXGA1-XAS (0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.53) BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：70

作者：

STOCKMAN, SA ^{[1
]}

HANSON, AW ^{[1
]}

STILLMAN, GE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 23期

关键词：

D O I：

10.1063/1.106814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carbon doping of InxGa1-xAs grown on GaAs and InP substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using CCl4 has been investigated for In mode fractions as high as x=0.53. P-type conduction was obtained over the entire composition range studied, with hole concentrations above 1X10(20) cm-3 for x<0.12, and as high as 1X10(19) cm-3 for In0.53Ga0.53Ga0.47As lattice-matched to InP. These high carbon concentrations were achieved by employing very low V/III ratios and low growth temperatures. The alloy composition was found to be dependent on several growth parameters, including CCl4 partial pressure, V/III ratio, and growth temperature. This may be due to surface reactions (etching) involving chlorine-containing compounds during growth. Samples grown at low temperature (approximately 500-degrees-C) and lattice matched to InP exhibited an increase in hole concentration upon post-growth annealing.

引用

页码：2903 / 2905

页数：3

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