THERMAL-REACTION OF TA THIN-FILMS WITH POLYCRYSTALLINE DIAMOND

被引：11
|
作者：
CHEN, JS [1 ]
KOLAWA, E [1 ]
NICOLET, MA [1 ]
POOL, FS [1 ]
机构：
[1] JET PROPULS LAB,PASADENA,CA 91109
来源：
THIN SOLID FILMS | 1993年 / 236卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(93)90645-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The thermal reaction of sputter-deposited Ta thin films with polycrystalline CVD-grown diamond substrates at temperatures between 700 degrees C and 1100 degrees C for 1 h is investigated by MeV He backscattering spectrometry, X-ray diffraction, and scanning electron microscopy. The product phases are polycrystalline Ta2C at 900 degrees C and TaC at 1000 degrees C with an initially 135 nm thick Ta film. The first phase formed conforms to the rule of Bene for metal-metal bilayers. No coexistence of Ta2C and TaC is observed during reaction. The second phase formed, TaC, is in thermodynamic equilibrium with carbon.
引用
收藏
页码：72 / 76
页数：5
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