DIFFRACTION EFFECTS IN AUGER QUANTITATIVE-ANALYSIS ON III-V COMPOUNDS

被引：11

作者：

VALERI, S ^{[1
]}

DIBONA, A ^{[1
]}

NAVA, E ^{[1
]}

机构：

[1] UNITA INFM,I-41100 MODENA,ITALY

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷

关键词：

D O I：

10.1016/0169-4332(93)90390-W

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The anisotropy in surface and subsurface ionization due to the primary electron diffraction has been conflictually reported to play a minor or major role in Auger spectroscopy, and the influence of instrumental and physical parameters has been discussed. We report on the effects of incoming beam diffraction on the quantitative analysis of cleaved, sputtered and Cs covered III-V compounds. We show that measurements must be taken into account for crystalline specimen orientation with respect to the incident beam direction.

引用

页码：20 / 23

页数：4

共 50 条

[1] INTERBAND AUGER RECOMBINATION IN III-V COMPOUNDS OF P-TYPE
TITKOV, AN
MIRONOV, IF
CHEBAN, VN
IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1988, 52 (04): : 738 - 742
[2] A quantitative model of surface segregation in III-V ternary compounds
Karpov, SY
Makarov, YN
MORPHOLOGICAL AND COMPOSITIONAL EVOLUTION OF HETEROEPITAXIAL SEMICONDUCTOR THIN FILMS, 2000, 618 : 185 - 191
[3] GROWTH EFFECTS IN THE HETEROEPITAXY OF III-V COMPOUNDS.
Olsen, G.H.
Ettenberg, M.
Proceedings of the Society of Photo-Optical Instrumentation Engineers, 1978, 2 : 1 - 56
[4] SUPERLATTICE AND DISORDER EFFECTS ON VIBRATIONS IN III-V COMPOUNDS
JUSSERAND, B
ANNALES DE PHYSIQUE, 1988, 13 (06) : 597 - 622
[5] INTERFACIAL LATTICE MISMATCH EFFECTS IN III-V COMPOUNDS
OLSEN, GH
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 223 - 239
[6] STOICHIOMETRY OF III-V COMPOUNDS
NISHIZAWA, J
OYAMA, Y
MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1994, 12 (6-8): : 273 - 426
[7] STOICHIOMETRY OF III-V COMPOUNDS
NISHIZAWA, J
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 21 (2-3): : 107 - 119
[8] Nanocrystals of III-V compounds
不详
OPTICAL PROPERTIES OF SEMICONDUCTOR QUANTUM DOTS, 1997, 136 : 199 - 208
[9] SCANNING AUGER MICROSCOPY FOR THE CHARACTERIZATION OF VERY THIN EPITAXIAL LAYERS IN III-V COMPOUNDS
BRESSE, JF
SURFACE SCIENCE, 1986, 168 (1-3) : 810 - 815
[10] APPLICATION OF SIMS ANALYSIS FOR THE HETEROSTRUCTURE OF III-V COMPOUNDS
GAO, Y
ALEXANDRE, F
HARMAND, JC
GODEFROY, S
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1988, 43 (241): : 261 - 262

← 1 2 3 4 5 →