共 50 条
- [1] DEGRADATION OF UNCOOLED ELECTRON-BEAM-PUMPED GALLIUM-ARSENIDE LASERS [J]. KVANTOVAYA ELEKTRONIKA, 1979, 6 (05): : 1109 - 1111
- [2] INFLUENCE OF IMPERFECTIONS IN GALLIUM-ARSENIDE CRYSTALLINE-STRUCTURE ON ELECTRON-BEAM-PUMPED LASER PARAMETERS [J]. KVANTOVAYA ELEKTRONIKA, 1975, 2 (05): : 1058 - 1062
- [3] THE CHARACTERIZATION OF CADMIUM-SULFIDE AND CADMIUM SELENIDE EPITAXIAL LAYERS GROWN BY MOCVD ON GALLIUM-ARSENIDE [J]. MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 217 - 222
- [4] THE CHARACTERIZATION OF CADMIUM-SULFIDE AND CADMIUM SELENIDE EPITAXIAL LAYERS GROWN BY MOCVD ON GALLIUM-ARSENIDE [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 217 - 222
- [5] LONGITUDINALLY ELECTRON-BEAM-PUMPED SCANNED AND CW-GASB LASERS [J]. KVANTOVAYA ELEKTRONIKA, 1985, 12 (04): : 845 - 848
- [6] SELF-DESTRUCTION OF ELECTRON-BEAM-PUMPED GALIUM ARSENIDE LASERS [J]. KVANTOVAYA ELEKTRONIKA, 1975, 2 (09): : 1969 - 1977
- [7] LASING THRESHOLD AND BEAM DIVERGENCE IN LONGITUDINALLY ELECTRON-BEAM-PUMPED SEMICONDUCTOR-LASERS [J]. KVANTOVAYA ELEKTRONIKA, 1985, 12 (04): : 848 - 851
- [9] CDSXSE1-X CDS HETEROSTRUCTURES IN LONGITUDINALLY ELECTRON-BEAM-PUMPED LASERS [J]. KVANTOVAYA ELEKTRONIKA, 1987, 14 (10): : 1994 - 1997
- [10] A LONGITUDINALLY ELECTRON-BEAM-PUMPED CD HGTE LASER [J]. KVANTOVAYA ELEKTRONIKA, 1989, 16 (10): : 2034 - 2036