A COMPARISON OF SI MOSFET AND GAAS-MESFET ENHANCEMENT DEPLETION LOGIC PERFORMANCE

被引：5

|

作者：

TAYLOR, GW

BAYRUNS, RJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 09期

关键词：

D O I：

10.1109/T-ED.1985.22173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1633 / 1641

页数：9

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