DESIGN OF MICROWAVE GAAS-MESFETS FOR BROAD-BAND, LOW-NOISE AMPLIFIER - COMMENTS

被引：18

作者：

POSPIESZALSKI, MW ^{[1
]}

WIATR, W ^{[1
]}

机构：

[1] WARSAW UNIV SCI & TECHNOL,INST ELECTR FUNDAMENTALS,PL-00661 WARSAW,POLAND

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1986年 / 34卷 / 01期

关键词：

D O I：

10.1109/TMTT.1986.1133309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：194 / 194

页数：1

共 50 条

[1] DESIGN OF MICROWAVE GAAS-MESFETS FOR BROAD-BAND LOW-NOISE AMPLIFIERS
FUKUI, H
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (07) : 643 - 650
[2] A GAAS MONOLITHIC LOW-NOISE BROAD-BAND AMPLIFIER
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[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1981, 16 (06) : 648 - 652
[3] Broad-band low-noise preamplifier design with GaAs MESFETs for optical communication systems
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[J]. 1998 URSI SYMPOSIUM ON SIGNALS, SYSTEMS, AND ELECTR ONICS, 1998, : 187 - 192
[4] CHARACTERIZATION AND DESIGN OF GAAS-MESFETS FOR BROAD-BAND CONTROL APPLICATIONS
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[J]. MICROWAVE JOURNAL, 1986, 29 (05) : 86 - 86
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[6] GAAS-MESFETS AND RELATED MONOLITHIC STRUCTURES AS BROAD-BAND MICROWAVE CONTROL DEVICES
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[J]. 19TH EUROPEAN MICROWAVE CONFERENCE : MICROWAVE 89, 1989, : 107 - 116
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[8] LOW-NOISE BROAD-BAND AMPLIFIER SYSTEM WITH LOW INPUT IMPEDANCE
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[9] COMMENTS ON THE MATCHED FEEDBACK-AMPLIFIER - ULTRAWIDE-BAND MICROWAVE AMPLIFICATION WITH GAAS-MESFETS
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[10] COMPUTER-AIDED DESIGN OF BROAD-BAND AND LOW-NOISE MICROWAVE AMPLIFIERS
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