LOW-FREQUENCY NOISE BEHAVIOR OF HIGH-ENERGY ELECTRON-IRRADIATED SI N(+)P JUNCTION DIODES

被引：8
|
作者：
DUBUC, JP
SIMOEN, E
VASINA, P
CLAEYS, C
机构：
[1] IMEC, B-3001 Leuven
[2] CEM, Univ., Montpellier II
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 12期
关键词：
ONE-OVER-F NOISE; SEMICONDUCTOR DEVICE NOISE; RADIATION EFFECTS; RADIATION HARDENING (ELECTRONICS); PN JUNCTIONS;
D O I：
10.1049/el:19950644
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The low-frequency noise behaviour in forward operation of high-energy electron irradiated Si n(+)p diodes is reported. For diodes fabricated on Czochralski substrates, negligible change in noise is observed, whereas for float-zone diodes, a reduction occurs after the irradiation. By comparison with reverse bias gated diode characteristics, it is concluded that the excess 1/f noise of the irradiated diodes is not correlated with the irradiation-induced degradation of the Si-SiO2 interface.
引用
收藏
页码：1016 / 1018
页数：3
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