SPECTRAL AND ANGULAR CHARACTERISTICS OF RADIATION PRODUCED BY PASSAGE OF 10-GEV ELECTRONS THROUGH THICK SI AND GE CRYSTALS

被引：0
|
作者：
BAVIZHEV, MD [1 ]
NILSEN, YV [1 ]
YURIEV, BA [1 ]
机构：
[1] MV LOMONOSOV STATE UNIV,INST NUCL PHYS,MOSCOW 119899,USSR
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1991年 / 115卷 / 04期
关键词：
RELATIVISTIC ELECTRONS; ELECTRON CHANNELING; CHANNEL RADIATION; RADIATION CHARACTERISTICS; BREMSSTRAHLUNG;
D O I：
10.1080/10420159108220576
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
The results of studying the angular and spectral characteristics of X-rays produced by passage of 10 GeV electrons through sufficiently thick Si (0.8 and 3.0 mm) and Ge (0,5 mm) single crystals at small angles to the (111) crystallographic axis are presented. Information have been obtained on the excess of the spectral-angular characteristics of radiation in the crystal over respective values for an amorphous target. © 1991, Taylor & Francis Group, LLC. All rights reserved.
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页码：297 / 305
页数：9
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