AMPLIFIERS WITH GUNN-DIODES AND IMPATT-DIODES AND STUDY OF THEIR QUALIFICATION FOR FM-MICROWAVE LINK SYSTEMS

被引：0

作者：

BRAND, P ^{[1
]}

KEINATH, H ^{[1
]}

机构：

[1] UNIV STUTTGART,INST HOCHFREQUENZ TECH,D-7000 STUTTGART 80,FED REP GER

来源：

FREQUENZ | 1977年 / 31卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：38 / 44

页数：7

共 14 条

[1] NOISE PERFORMANCES OF GUNN-DIODES AMPLIFIERS
VOROBYEV, YP
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1979, 22 (12): : 58 - 60
[2] NOISE FIGURE OF REFLECTION-TYPE AMPLIFIERS WITH IMPATT-DIODES
FREYER, U
NACHRICHTENTECHNISCHE ZEITSCHRIFT, 1971, 24 (03): : 143 - &
[3] PECULIARITIES OF LF OSCILLATION IN MICROWAVE GUNN-DIODES
USANOV, DA
GORBATOV, SS
SKRIPAL, AV
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1981, 24 (10): : 67 - 69
[4] GENERATION OF NANOSECOND MICROWAVE PULSES BY GUNN-DIODES
SHIYAN, VP
POPOV, AI
GONYAEV, GS
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1986, 29 (06) : 1350 - 1352
[5] APPROXIMATE ESTIMATION OF NOISE PERFORMANCES OF GUNN-DIODES AMPLIFIERS
VOROBYEV, YP
SAVELEV, VY
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1980, 23 (10): : 20 - 23
[6] A POSSIBLE METHOD OF REDUCING THE NOISE OF OSCILLATORS USING IMPATT AND GUNN-DIODES
VENGER, AZ
GAVRILOVA, NI
YAKIMENKO, AM
TELECOMMUNICATIONS AND RADIO ENGINEERING, 1980, 34-5 (02) : 95 - 96
[7] LOW-FREQUENCY FLUCTUATIONS OF MICROWAVE ADMITTANCE OF GUNN-DIODES
KARASEV, AS
SHEVCHENKO, VI
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOFIZIKA, 1988, 31 (08): : 1001 - 1005
[8] MICROWAVE OSCILLATION MODES OF GUNN-DIODES ABOVE TRANSIT FREQUENCY
ALTUKHOV, IV
KAGAN, MS
KALASHNIKOV, SG
KUKUSHKIN, VV
SOLYAKOV, VN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (12): : 1356 - 1360
[9] IMPATT DIODES START COMPETING AS MICROWAVE SYSTEM AMPLIFIERS
BOWERS, HC
ELECTRONICS, 1972, 45 (18): : 82 - &
[10] APPLICATION OF GUNN AND IMPATT DIODES AS MICROWAVE SOURCES IN ESR SPECTROMETERS
BAICAN, R
STUDII SI CERCETARI DE FIZICA, 1975, 27 (05): : 489 - 501

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