PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC OR BORON-DIFFUSION IN SILICON

被引：0

|

作者：

WANG, WS

LO, YH

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1828 / 1831

页数：4

相关论文

共 50 条

[1] HIGH-CONCENTRATION BORON-DIFFUSION IN SILICON - SIMULATION OF THE PRECIPITATION PHENOMENA
SOLMI, S
LANDI, E
BARUFFALDI, F
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3250 - 3258
[2] PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC DIFFUSIONS IN SILICON
FAIR, RB
JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1278 - &
[3] ONE-DIMENSIONAL MODELING OF HIGH-CONCENTRATION BORON-DIFFUSION IN POLYSILICON SILICON STRUCTURES
SADOVNIKOV, AD
SOLID-STATE ELECTRONICS, 1991, 34 (09) : 969 - 975
[4] ARSENIC AND BORON-DIFFUSION IN POLYCRYSTALLINE SILICON
LEE, CH
YEN, AC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C107 - C107
[5] MODELING HIGH-CONCENTRATION BORON-DIFFUSION UNDER AMORPHIZATION CONDITIONS
BACCUS, B
VANDENBOSSCHE, E
LANNOO, M
JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) : 5630 - 5641
[6] BORON-DIFFUSION IN SILICON-CONCENTRATION AND ORIENTATION DEPENDENCE, BACKGROUND EFFECTS, AND PROFILE ESTIMATION
FAIR, RB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (06) : 800 - 805
[7] MODELING HIGH-CONCENTRATION BORON-DIFFUSION WITH DYNAMIC CLUSTERING - INFLUENCE OF THE INITIAL CONDITIONS
BACCUS, B
VANDENBOSSCHE, E
MICROELECTRONICS JOURNAL, 1995, 26 (2-3) : 235 - 242
[8] BORON-DIFFUSION IN SILICON
MARCHIANDO, JF
ROITMAN, P
ALBERS, J
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) : 2322 - 2330
[9] HIGH-CONCENTRATION ARSENIC DIFFUSION IN CRYSTALLINE SILICON - AN ASYMPTOTIC ANALYSIS
KING, JR
IMA JOURNAL OF APPLIED MATHEMATICS, 1987, 38 (02) : 87 - 95
[10] THE BORON-DIFFUSION IN SILICON - PROFILE AND DATA-ANALYSIS
GAISEANU, F
LOGHIN, V
DIMA, I
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C328 - C328

← 1 2 3 4 5 →