RADIATION DEFECTS IN SILICON DOPED BY IMPLANTATION OF BORON AND HELIUM-IONS

被引：0

作者：

KOVALEV, GG

SOKOLOV, VN

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 06期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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引用

页码：676 / 677

页数：2

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[1] DEEP CENTERS INDUCED BY IMPLANTATION OF HELIUM-IONS IN SILICON
KASATKIN, AP
MUREL, AV
SHITOVA, EV
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1988, 31 (03): : 122 - 124
[2] INTENSIFIED BORON-DIFFUSION IN SILICON UNDER ACTION OF HELIUM-IONS
KOVALEV, GG
SUPRUN, SG
[J]. FIZIKA TVERDOGO TELA, 1980, 22 (09): : 2867 - 2868
[3] ENERGY-SPECTRUM OF DEFECTS IN SILICON IRRADIATED WITH HYDROGEN AND HELIUM-IONS
AESHIN, AI
SMIRNOV, LS
STAS, VF
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (03): : 348 - 349
[4] SOME CHARACTERISTICS OF DISTRIBUTION OF RADIATION DEFECTS RESULTING FROM IMPLANTATION OF BORON IONS IN SILICON
SKAKUN, NA
DIKII, NP
MATYASH, PP
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 854 - 855
[5] RADIATION-DAMAGE STUDY OF BORON-CARBIDE PELLETS USING HELIUM-IONS
SARASWATI, V
RAO, GVN
[J]. JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (03) : 260 - 262
[6] POINT RADIATION DEFECTS IN BORON-DOPED SILICON
EMTSEV, VV
MASHOVETS, TV
NAZARYAN, EK
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (05): : 587 - 589
[7] HALL-EFFECT INVESTIGATION OF ANNEALING OF RADIATION DEFECTS IN SILICON DOPED BY BOMBARDMENT WITH BORON IONS
YACHMENEV, SN
LOBOV, VA
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (05): : 656 - 657
[8] MICROPROBE OF HELIUM-IONS
ITAKURA, T
HORIUCHI, K
NAKAYAMA, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (05): : 2596 - 2601
[9] NATURE OF RADIATION DEFECTS CREATED BY BOMBARDMENT OF SILICON WITH BORON IONS
SMIRNOV, IN
PONOMAREV, AI
SHCHEMELEV, VN
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 422 - 425
[10] Interaction of Copper Impurity with Radiation Defects in Silicon Doped with Boron
Yarykin, N. A.
Weber, J.
[J]. SEMICONDUCTORS, 2010, 44 (08) : 983 - 986

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