PROBING GROWTH-RELATED DISORDER BY HIGH-FIELD TRANSPORT IN SEMICONDUCTOR SUPERLATTICES

被引：26
|
作者：
WACKER, A [1 ]
SCHWARZ, G [1 ]
PRENGEL, F [1 ]
SCHOLL, E [1 ]
KASTRUP, J [1 ]
GRAHN, HT [1 ]
机构：
[1] PAUL DRUDE INST FESTKORPERELEKTR,D-10117 BERLIN,GERMANY
来源：
PHYSICAL REVIEW B | 1995年 / 52卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.52.13788
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the influence of imperfections in the sample growth on the electrical transport in doped superlattices. While structurally perfect samples should exhibit a regular set of current branches, our theoretical investigations show that local fluctuations of the sample parameters in the growth direction strongly modulate the branches of the current-voltage characteristic, A comparison with experimental data allows an estimate of the range of doping fluctuations between 3% and 10%. The disorder strongly affects the frequency as well as the mode of the self-oscillations of the current.
引用
收藏
页码：13788 / 13791
页数：4
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