CHARGING EFFECTS IN QUANTUM DOTS

被引:3
|
作者
KOUWENHOVEN, LP
VANDERVAART, NC
JOHNSON, AT
HARMANS, CJPM
WILLIAMSON, JG
STARING, AAM
FOXON, CT
机构
[1] DELFT UNIV TECHNOL,FAC APPL PHYS,2600 GA DELFT,NETHERLANDS
[2] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
[3] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND
关键词
D O I
10.1007/BFb0107875
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have studied single electron charging effects in lateral quantum dots, defined by metal gates in the two dimensional electron gas of a GaAs/AlGaAs heterostructure. The charging effects cause periodic oscillations in the conductance versus gate voltage, where each period corresponds to a change of one electron in the dot. A study of the dependence of these Coulomb oscillations on the barrier conductances shows that charging effects become visible precisely when the barrier conductances become smaller than the quantized conductance value 2e2/h. The amplitude of the Coulomb oscillations increases gradually upon reducing the barrier conductances to a value much smaller than 2e2/h. We determine experimentally the total capacitance involved, and thereby the corresponding charging energy.
引用
收藏
页码:329 / 340
页数:12
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