GATE CURRENTS AND SPACE-CHARGE IN SILICON DIOXIDE UNDER EXPOSURE TO AN ELECTRON-BEAM

被引：0
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作者：
AKULOV, AF
GURTOV, VA
NAZAROV, AI
OGURTSOV, OF
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来源：
SOVIET MICROELECTRONICS | 1986年 / 15卷 / 04期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：177 / 187
页数：11
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