OPTICAL-PROPERTIES OF AMORPHOUS INSB

We have presented experimental results for the optical constants of amorphous InSb films prepared by rf plasma deposition. The measured data are analyzed on the basis of a simplified model of nondirect optical transitions between the valence and conduction bands. Introducing a phenomenological damping effect into the model, the calculated spectra become structureless, which are typically observed in tetrahedrally bonded amorphous semiconductors. Results are in reasonable agreement with the experimental data over the entire range of photon energy (0.3-5.3 eV).