HYDROGEN PASSIVATION OF SILICON SURFACES USING HF ETCHING

被引：0
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作者：
CHABAL, YJ [1 ]
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1991年 / 201卷
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D O I：
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中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
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页码：52 / PHYS
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