FABRICATION OF SUBMICROMETER STRUCTURES IN SI USING SICL4/O2 REACTIVE-ION ETCHING

被引：0
|
作者：
CABRAL, SM [1 ]
RATHMAN, DD [1 ]
ECONOMOU, NP [1 ]
机构：
[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C81 / C81
页数：1
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