GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：88

|

作者：

FEKETA, D

CHAN, KT

BALLANTYNE, JM

EASTMAN, LF

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 24期

关键词：

D O I：

10.1063/1.97258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1659 / 1660

页数：2

相关论文

共 50 条

[1] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INGAAS-GAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL LASERS
YORK, PK
BEERNINK, KJ
KIM, J
ALWAN, JJ
COLEMAN, JJ
WAYMAN, CM
JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 741 - 750
[2] STRAINED-LAYER INGAAS-GAAS-ALGAAS GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
OFFSEY, SD
SCHAFF, WJ
TASKER, PJ
EASTMAN, LF
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2608 - 2608
[3] INGAAS GAINASP GAINP STRAINED-LAYER QUANTUM-WELL SEPARATE-CONFINEMENT HETEROSTRUCTURES GROWN BY OMVPE
GROVES, SH
JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 747 - 750
[4] INGAAS-GAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL LASERS BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
YORK, PK
BEERNINK, KJ
FERNANDEZ, GE
COLEMAN, JJ
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1990, 5 (06) : 508 - 511
[5] STRAINED-LAYER INGAAS-GAAS-ALGAAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY
OFFSEY, SD
SCHAFF, WJ
TASKER, PJ
ENNEN, H
EASTMAN, LF
APPLIED PHYSICS LETTERS, 1989, 54 (25) : 2527 - 2529
[6] ETHYLDIMETHYLINDIUM FOR THE GROWTH OF INGAAS-GAAS STRAINED-LAYER LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
YORK, PK
BEERNINK, KJ
KIM, J
COLEMAN, JJ
FERNANDEZ, GE
WAYMAN, CM
APPLIED PHYSICS LETTERS, 1989, 55 (24) : 2476 - 2478
[7] SOME CHARACTERISTICS OF THE GAAS GAALAS GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURE QUANTUM WELL LASER STRUCTURE
HERSEE, SD
DECREMOUX, B
DUCHEMIN, JP
APPLIED PHYSICS LETTERS, 1984, 44 (05) : 476 - 478
[8] InGaAs/GaAs/InGaP Strained Quantum Well Lasers Grown by Metalorganic Chemical Vapor Deposition
Yang Guowen Xu Zuntu Ma Xiaoyu Xu Junying Zhang Jingming Chen Lianghui (Institute of Semiconductors
半导体学报, 1998, (07) : 69 - 72
[9] CALCULATION OF CARRIER CAPTURE TIME OF A QUANTUM-WELL IN GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURES
BRUM, JA
WEIL, T
NAGLE, J
VINTER, B
PHYSICAL REVIEW B, 1986, 34 (04): : 2381 - 2384
[10] DEPENDENCE OF THRESHOLD CURRENT-DENSITY ON QUANTUM WELL COMPOSITION FOR STRAINED-LAYER INGAAS-GAAS LASERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BEERNINK, KJ
YORK, PK
COLEMAN, JJ
APPLIED PHYSICS LETTERS, 1989, 55 (25) : 2585 - 2587

← 1 2 3 4 5 →