ELECTRON AND IMPURITY CORRELATIONS IN DOPED SEMICONDUCTORS

被引:10
|
作者
KISHORE, R
LIMA, ICD
FABBRI, M
DASILVA, AF
机构
来源
PHYSICAL REVIEW B | 1982年 / 26卷 / 02期
关键词
D O I
10.1103/PhysRevB.26.1038
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1038 / 1041
页数:4
相关论文
共 50 条
  • [1] Spatial correlations of impurity charges in doped semiconductors
    Suski, T
    [J]. HIGH PRESSURE IN SEMICONDUCTOR PHYSICS I, 1998, 54 : 485 - 512
  • [2] ELECTRON CORRELATION EFFECT IN IMPURITY DOPED SEMICONDUCTORS
    NATORI, A
    [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (09) : 2869 - 2877
  • [3] NOVEL MECHANISM FOR THE FORMATION OF IMPURITY LEVELS IN SEMICONDUCTORS WITH THE STRONG ELECTRON CORRELATIONS
    OVCHINNIKOV, SG
    [J]. ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI, 1992, 102 (02): : 534 - 540
  • [4] THE IMPURITY BANDS IN DOPED SEMICONDUCTORS
    MAKLER, SS
    ANDA, EV
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (03): : 457 - 466
  • [5] Effective equations for the precession dynamics of electron spins and electron-impurity correlations in diluted magnetic semiconductors
    Cygorek, M.
    Axt, V. M.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2015, 30 (08)
  • [6] Spatial correlations of impurity charges in gapless semiconductors
    Tsidilkovski, IM
    Kuleyev, IG
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (05) : 625 - 640
  • [7] Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors
    Tamborenea, Pablo I.
    Weinmann, Dietmar
    Jalabert, Rodolfo A.
    [J]. PHYSICAL REVIEW B, 2007, 76 (08)
  • [8] Delocalized Impurity Phonon Induced Electron-Hole Recombination in Doped Semiconductors
    Zhang, Lili
    Zheng, Qijing
    Xie, Yu
    Lan, Zhenggang
    Prezhdo, Oleg V.
    Saidi, Wissam A.
    Zhao, Jin
    [J]. NANO LETTERS, 2018, 18 (03) : 1592 - 1599
  • [9] METALLIC IMPURITY CONDUCTION IN DOPED SEMICONDUCTORS
    OOTUKA, Y
    KAWABATA, A
    [J]. SUPPLEMENT OF THE PROGRESS OF THEORETICAL PHYSICS, 1985, (84): : 249 - 268
  • [10] FORMATION OF IMPURITY BANDS IN DOPED SEMICONDUCTORS
    MONECKE, J
    KORTUS, J
    CORDTS, W
    [J]. PHYSICAL REVIEW B, 1993, 47 (15) : 9377 - 9384