RAPID ANNEALING EFFECT IN THE SUPERCONDUCTING 2223 BI(PB)SRCACUO THIN-FILMS PREPARED BY SPUTTERING

被引:39
|
作者
HAKURAKU, Y
MORI, Z
机构
[1] Department of Electronics, Kagoshima University, Koorimoto
关键词
D O I
10.1063/1.353849
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin films of Bi(Pb) SrCaCuO were prepared on MgO (100) by single-target sputtering. This deposition process yielded c-axis oriented superconducting thin films with a smooth surface. The as-grown films showed a 2223 single phase and zero resistivity at about 83 K. After deposition, the films were rapidly annealed at 830-850-degrees-C within 120 s in air.The superconducting properties of the annealed films were greatly improved by optimizing the temperature and time during rapid annealing. The lead concentration in the as-grown films apparently was almost zero. However, the films annealed while placing a Bi(Pb)SrCaCuO bulk sample directly on the film surface had a clear lead concentration. The relative cationic ratio of the other elements in the annealed films was almost the same as that of the as-grown films. X-ray photoelectron spectroscopy measurement was carried out to study the change of chemical environments of each ion. Films annealed at 840-degrees-C for 30 s in air showed zero resistivity at 105 K and had the critical current density of about 3 X 10(6) A/cm2 at 77 K.
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页码:309 / 315
页数:7
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