MONTE-CARLO SIMULATION OF NOISE IN GAAS SEMICONDUCTOR-DEVICES

被引：13
|
作者：
ADAMS, JG
TANG, TW
KAY, LE
机构：
[1] NORTHEASTERN UNIV,DEPT ELECT & COMP ENGN,BOSTON,MA 02115
[2] UNIV MASSACHUSETTS,DEPT ELECT & COMP ENGN,AMHERST,MA 01003
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 04期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/16.278512
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Monte Carlo method has been used to calculate the noise in GaAs resistors where finite-size effects are important, being from 0.5 to 1.5 mum in length. The results agree qualitatively with experimental noise measurements performed on similar devices. Monte Carlo noise calculations have also been conducted for Schottky barrier diodes. A method for conducting full-device Monte Carlo simulations of these diodes has been employed. Schottky barrier diodes with both 0.12 and 1.0 mum epitaxial layers were modeled, and the calculated noise is in agreement with experiment throughout a wide range of bias voltages, both when shot noise and when excess noise predominate. Two different methods of calculating the noise current have been compared.
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页码：575 / 581
页数：7
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