DEPTH PROFILES OF THE OPTICAL-PROPERTIES OF BURIED OXIDES (SIMOX) BY ELLIPSOMETRY

被引:13
|
作者
LEVY, M [1 ]
SCHEID, E [1 ]
CRISTOLOVEANU, S [1 ]
机构
[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
关键词
D O I
10.1016/0040-6090(87)90150-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:127 / 134
页数:8
相关论文
共 50 条
  • [1] THE USE OF ELLIPSOMETRY FOR THE EVALUATION OF SIMOX BURIED OXIDES
    SCHMIDT, DN
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C122 - C122
  • [2] Response of SIMOX and Unibond buried oxides: Trapping and detrapping properties
    Paillet, P
    Ferlet-Cavrois, V
    Schwank, JR
    Fleetwood, DM
    [J]. FIFTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1999, : 328 - 332
  • [3] Electrochemical analysis of SIMOX buried oxides
    Allen, LP
    Anc, MJ
    Duffy, M
    Parechanian, JH
    Yap, JH
    [J]. PROCEEDINGS OF THE SEVENTH INTERNATIONAL SYMPOSIUM ON SILICON-ON-INSULATOR TECHNOLOGY AND DEVICES, 1996, 96 (03): : 18 - 27
  • [4] OPTICAL-PROPERTIES OF METALS BY SPECTROSCOPIC ELLIPSOMETRY
    ARAKAWA, ET
    INAGAKI, T
    WILLIAMS, MW
    [J]. SURFACE SCIENCE, 1980, 96 (1-3) : 248 - 274
  • [5] MULTILAYER STRUCTURES AND OPTICAL-PROPERTIES OF SIMNI AND SIMOX MATERIALS
    LIN, CL
    YU, YH
    FANG, ZW
    ZHANG, SK
    NI, RS
    ZOU, SC
    LI, JH
    HEMMENT, PLF
    [J]. SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY & TECHNOLOGICAL SCIENCES, 1991, 34 (03): : 376 - 384
  • [6] ELECTRON TRAPPING IN IRRADIATED SIMOX BURIED OXIDES
    OUISSE, T
    CRISTOLOVEANU, S
    BOREL, G
    [J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (06) : 312 - 314
  • [7] OPTICAL-PROPERTIES OF ZIRCALOY AND ZIRCALOY OXIDE BY ELLIPSOMETRY
    BASHARA, NM
    PENG, YK
    [J]. APPLIED OPTICS, 1980, 19 (18): : 3245 - 3251
  • [8] MEASUREMENT OF THE THICKNESS AND OPTICAL-PROPERTIES OF THERMAL OXIDES OF SI USING SPECTROSCOPIC ELLIPSOMETRY AND STYLUS PROFILOMETRY
    MRSTIK, BJ
    MCMARR, PJ
    BLANCO, JR
    BENNETT, JM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (06) : 1770 - 1778
  • [9] Spectroscopic ellipsometry of SIMOX (Separation by implanted oxygen): Thickness distribution of buried oxide and optical properties of top-Si layer
    Jayatissa, AH
    Yamaguchi, T
    Nasu, M
    Aoyama, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2581 - 2586
  • [10] Trapping detrapping properties of irradiated ultra-thin SIMOX buried oxides
    Paillet, P
    Autran, JL
    Leray, JL
    Aspar, B
    AubertonHerve, AJ
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) : 2108 - 2113