HIGH-POWER, 60W QUASI-CW, VISIBLE LASER DIODE-ARRAYS

被引：5
|
作者：
HADEN, JM
NAM, DW
WELCH, DF
ENDRIZ, JG
SCIFRES, DR
机构：
[1] Spectra Diode Laboratories, San Jose, CA 95134
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 05期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19920284
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Visible spectrum diode arrays have been fabricated from (AlxGa1-x)0.5In0.5P-Ga0.4In0.6P quantum well heterostructures operating to high output powers at wavelengths of approximately 690 nm. Bars 7.5 mm long with 110-mu-m broad area emitting apertures on 125-mu-m centers have reached quasi-CW output powers of 60 W.
引用
收藏
页码：451 / 452
页数：2
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