SUPPRESSION OF HOT-ELECTRON FLUCTUATIONS IN SUBMICROMETER SEMICONDUCTOR LAYERS

A physical model is proposed tor limitation and suppression of spectral intensity of hot-electron fluctuations in submicrometre semiconductor layers, where the thickness 2d of the sample is comparable to the electron energy relaxation length L(epsilon). We suppose two identical layer surfaces, no space charge and surface charges at zero bias, the electron temperature approach, and the surface velocity approximation. Electric field E and dimension 2d dependences of spectral densities of fluctuations, small-signal conductivities and noise temperatures are investigated. A decrease of the spectral intensity of hot-electron fluctuations and noise temperature takes place when 2d < L(epsilon) in the range of fluctuation frequencies omegatau(epsilon) much less than 1, where tau(epsilon) is the electron energy relaxation time.