DEVELOPMENT OF THE OPTICAL-BREAKDOWN ON THE SURFACE OF SEMICONDUCTORS UPON EXPOSURE TO THE RADIATION FROM 2 LASERS WITH DIFFERENT FREQUENCIES

被引：0

作者：

VIGANT, YV

KULIKOV, OL

LURE, VA

MAKSHANTSEV, BI

MAMIN, AM

PILIPETSKII, NF

机构：

来源：

KVANTOVAYA ELEKTRONIKA | 1988年 / 15卷 / 09期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1848 / 1855

页数：8

共 50 条

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[6] ROLE OF RADIATION COLOR-CENTERS IN THE DEVELOPMENT OF THE SILICATE GLASS OPTICAL-BREAKDOWN
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[7] SPATIAL AND TEMPORAL DISTRIBUTION OF THE CO2-LASER RADIATION ON A TARGET SURFACE IN THE PRESENCE OF THE OPTICAL-BREAKDOWN PLASMA
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[8] AN EFFECT OF THE ORGANIC-COMPOUND VAPOR AND OF THE UV-RADIATION OF A SURFACE ON THE OPTICAL-BREAKDOWN THRESHOLD
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[9] DEPENDENCE OF THRESHOLDS OF OPTICAL-BREAKDOWN OF THE CLEAR DIELECTRIC PLATE SURFACE ON AN ANGLE OF INCIDENCE OF POLARIZED RADIATION
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[10] AN EFFECT OF RADIATION FOCUSING AND QUALITY OF OPTICAL-SYSTEM SURFACE-TREATMENT ON MEASUREMENTS OF OPTICAL-BREAKDOWN THRESHOLDS
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