2D HOT-ELECTRON TRANSPORT IN A MODULATION-DOPED GAAS/ALGAAS INTERFACE

被引：9
|
作者：
INOUE, M [1 ]
HIDA, H [1 ]
INAYAMA, M [1 ]
INUISHI, Y [1 ]
NANBU, K [1 ]
HIYAMIZU, S [1 ]
机构：
[1] FUJITSU LABS LTD,KAWASAKI,KANAGAWA 211,JAPAN
来源：
PHYSICA B & C | 1983年 / 117卷 / MAR期
关键词：
D O I：
10.1016/0378-4363(83)90634-4
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：720 / 722
页数：3
相关论文
共 50 条
  • [1] 2D HOT ELECTRON TRANSPORT IN A MODULATION-DOPED GaAs/AlGaAs INTERFACE.
    Inoue, M.
    Hida, H.
    Inayama, M.
    Inuishi, Y.
    Nanbu, K.
    Hiyamizu, S.
    [J]. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt II): : 720 - 722
  • [2] TRANSPORT-PROPERTIES OF 2D HOT-ELECTRONS AT MODULATION-DOPED GAAS/ALGAAS INTERFACES
    INOUE, M
    HIYAMIZU, S
    HIDA, H
    NANBU, K
    HASHIMOTO, H
    INUISHI, Y
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 257 - 262
  • [3] INTERFACE STATES OF MODULATION-DOPED ALGAAS/GAAS HETEROSTRUCTURES
    CHUNG, SK
    WU, Y
    WANG, KL
    SHENG, NH
    LEE, CP
    MILLER, DL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) : 149 - 153
  • [4] HOT-ELECTRON TRANSPORT IN GAAS-ALGAAS HETEROJUNCTIONS
    LEI, XL
    ZHANG, JQ
    BIRMAN, JL
    TING, CS
    [J]. PHYSICAL REVIEW B, 1986, 33 (06): : 4382 - 4385
  • [5] HOT-ELECTRON DISTRIBUTION AND TRANSPORT IN ALGAAS/GAAS/ALGAAS QUANTUM WELLS
    MAKIYAMA, K
    INOUE, M
    ASHIDA, M
    CHO, Y
    IWAI, Y
    SASA, S
    HIYAMIZU, S
    [J]. SOLID-STATE ELECTRONICS, 1988, 31 (3-4) : 371 - 374
  • [6] HOT-ELECTRON EFFECTS IN A 2D ELECTRON-GAS AT THE GAAS/A1GAAS INTERFACE
    INOUE, M
    HIYAMIZU, S
    HIDA, H
    HASHIMOTO, H
    INUISHI, Y
    [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC7): : 19 - 24
  • [7] ELECTRON-DISTRIBUTION IN MODULATION-DOPED ALGAAS/GAAS SINGLE QUANTUM-WELLS AND INVERTED MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    SUZUKI, K
    SAITO, K
    SAKU, T
    SUGIMURA, A
    HORIKOSHI, Y
    YAMADA, S
    [J]. JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 1266 - 1269
  • [8] Hot-electron transport in heavily doped GaAs
    Long, AP
    Beton, PH
    Kelly, MJ
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) : 63 - 70
  • [9] HOT-ELECTRON TRANSPORT IN SELECTIVELY DOPED N-TYPE ALGAAS/GAAS HETEROJUNCTIONS
    HIRAKAWA, K
    SAKAKI, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 803 - 808
  • [10] Limit of electron mobility in AlGaAs/GaAs modulation-doped heterostructures
    Saku, T
    Horikoshi, Y
    Tokura, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (1A): : 34 - 38
12345