AN IMPROVED MO/N-GAAS CONTACT BY INTERPOSITION OF A THIN PD LAYER

被引：2
|
作者：
NEE, CY [1 ]
CHANG, CY [1 ]
CHENG, TF [1 ]
HUANG, TS [1 ]
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期
关键词：
D O I：
10.1109/55.728
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：315 / 316
页数：2
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