KINETICS OF COMPOSITIONAL DISORDERING OF ALGAAS/GAAS QUANTUM-WELLS INDUCED BY LAW-TEMPERATURE GROWN GAAS

被引：35
|
作者：
TSANG, JS [1 ]
LEE, CP [1 ]
LEE, SH [1 ]
TSAI, KL [1 ]
CHEN, HR [1 ]
机构：
[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30050,TAIWAN
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 09期
关键词：
D O I：
10.1063/1.359453
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Compositional disordering of GaAs/AlGaAs quantum wells due to the presence of low-temperature grown GaAs (by molecular beam epitaxy) was studied. Ga vacancy enhanced interdiffusion was found to be the mechanism underlying the observed intermixing. Diffusion equations were solved numerically to obtain the band profile after intermixing. The transition energies in the quantum wells under various annealing conditions were solved and agree very well with the observed photoluminescence emission peaks. The diffusivity of Ga vacancies and that of induced Al-Ga interdiffusion were obtained. The vacancy induced interdiffusion diffusivity was found to have an activation energy of 4.08 eV, which is smaller than the activation energy of interdiffusion diffusivity of normal temperature grown GaAs/AlGaAs heterostructures. This is a clear indication of enhanced interdiffusion due to the presence of low-temperature grown GaAs. © 1995 American Institute of Physics.
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页码：4302 / 4306
页数：5
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