OPTICAL 2ND HARMONIC-GENERATION AS AN INSITU SURFACE DIAGNOSTIC PROBE OF SEMICONDUCTOR GROWTH-PROCESSES .1. ADSORPTION OF TRIETHYLGALLIUM ON GAAS (100) AT 300-K

被引:15
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作者
BUHAENKO, DS
FRANCIS, SM
GOULDING, PA
PEMBLE, ME
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10.1016/0022-0248(89)90559-9
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O7 [晶体学];
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0702 ; 070205 ; 0703 ; 080501 ;
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页码:595 / 598
页数:4
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