TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT DENSITY OF GALLIUM ARSENIDE SEMICONDUCTOR LASERS

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作者：
LESKOVICH, VI
PAK, GT
PETROV, AI
CHERNOUS.NP
SHVEIKIN, VI
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1968年 / 1卷 / 09期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：1201 / +
页数：1
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