CADMIUM TELLURIDE THIN-FILMS DOPED WITH INDIUM - A MORPHOLOGICAL-STUDY

CdTe thin films doped with indium were studied by Scanning Electron Microscopy (SEM). Samples were prepared using Coming glass as a substrate by the Close-Space Vapour Transport with Hot Walls (CSVT-HW) technique. All the samples were prepared using 500 degrees C (T-subs) and 600 degrees C (T-CdTe) as substrate and CdTe source temperatures, respectively. Indium (In) was introduced as a dopant by evaporation during thin-film preparation. The In source temperature was varied from 560 degrees C to 730 degrees C in order to obtain different In concentrations. The mean grain size as a function of the indium temperature and its relationship to electrical properties are analysed. By making mechanical fractures on the thin films, the lateral growth morphology and conditions of contact with the substrate were studied.