PROCESSING AND CHARACTERIZATION OF SOL-GEL DERIVED VERY THIN-FILM FERROELECTRIC CAPACITORS

被引：35
|
作者：
SANCHEZ, LE
DION, DT
WU, SY
NAIK, IK
机构：
[1] McDonnell Douglas Electronic Systems Company, Huntington Beach, CA 92647
来源：
FERROELECTRICS | 1991年 / 116卷 / 1-2期
关键词：
D O I：
10.1080/00150199108007926
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The processing and characterization of very thin (425-1250Å) film lead zirconate-titanate (PZT) ferroelectric capacitors, made by the sol-gel method, are described. Capacitors with a PZT film thickness of approximately 500° have been found to switch and saturate at 3 volts. Such capacitors are being integrated with GaAs JFET technology for the fabrication of GaAs nonvolatile memories where a switching voltage of 3 volts is employed. The effects of various processing parameters on the performance of the PZT capacitors are presented. © 1991, Taylor & Francis Group, LLC. All rights reserved.
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页码：1 / 17
页数：17
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