ANOMALOUS HALL-EFFECT IN A NONMAGNETIC SEMICONDUCTOR

被引：2
|
作者：
OBUKHOV, SA
VOLKOVA, IK
机构：
[1] A. F. Ioffe Institute of Physics and Technology, St. Petersburg
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 173卷 / 02期
关键词：
D O I：
10.1002/pssb.2221730220
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The anomalous Hall effect is considered in a system of magnetic impurities on the example o t nonmagnetic semiconductor InSb:Mn. From an analysis of the Hall constant as a function of impurity (Mn) concentration, temperature, and magnetic field strength the magnetic susceptibility of the system and the magnetic ordering temperature, T almost-equal-to 1 K, are determined. A physical model is proposed giving a qualitative explanation of the anomalous Hall effect in a system of magnetic impurities. It is argue that the exchange interaction at the boundary for the metal-insulator transition in a system of magnetic impurities damps Coulomb fluctuations.
引用
收藏
页码：681 / 689
页数：9
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