INFLUENCE OF INHOMOGENEOUS INJECTION ON SIDEMODE SUPPRESSION IN STRONGLY COUPLED DFB SEMICONDUCTOR-LASERS

被引：24
|
作者：
BANDELOW, U
WENZEL, H
WUNSCHE, HJ
机构：
[1] Humboldt-University, Department of Physics, D-O-1040 Berlin
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 14期
关键词：
SEMICONDUCTOR LASERS; LASERS;
D O I：
10.1049/el:19920841
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A longitudinally nonuniform injection counteracting the spatial hole burning in quarter-wavelength shifted DFB semiconductor lasers with strong coupling has been obtained from a quasi-three-dimensional model. This effect enlarges with falling series resistances. It substantially lowers the degradation of sidemode suppression compared with former models that assume homogeneous injection.
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页码：1324 / 1326
页数：3
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