4-GHZ HIGH-EFFICIENCY BROAD-BAND FET POWER-AMPLIFIERS

被引：0

|

作者：

CHOU, S

CHANG, C

机构：

来源：

COMSAT TECHNICAL REVIEW | 1982年 / 12卷 / 02期

关键词：

D O I：

暂无

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

引用

收藏

页码：399 / 411

页数：13

相关论文

共 50 条

[1] DESIGN OF BROAD-BAND GAAS-FET POWER-AMPLIFIERS
RAUSCHER, C
WILLING, HA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (10) : 1054 - 1059
[2] HIGH-EFFICIENCY MICROWAVE FET POWER-AMPLIFIERS
SECHI, FN
[J]. MICROWAVE JOURNAL, 1981, 24 (11) : 59 - &
[3] HIGH-EFFICIENCY 1, 2 AND 4 W CLASS-B FET POWER-AMPLIFIERS
LANE, JR
FREITAG, RG
DEGENFORD, JE
COHN, M
[J]. MICROWAVE JOURNAL, 1986, 29 (05) : 92 - 92
[4] DESIGN TECHNIQUE FOR BROAD-BAND MICROWAVE TRANSISTOR POWER-AMPLIFIERS
KOTZEBUE, KL
EHLERS, ER
[J]. IEE JOURNAL ON MICROWAVES OPTICS AND ACOUSTICS, 1979, 3 (03): : 121 - 127
[5] BROAD-BAND INTERCASCADE MATCHING OF SHF TRANSISTORS IN POWER-AMPLIFIERS
KOVALENKO, VS
KHOTUNTSEV, YL
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1976, 19 (11): : 43 - 46
[6] DESIGN OF BROAD-BAND POWER GAAS-FET AMPLIFIERS
TAJIMA, Y
MILLER, PD
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (03) : 261 - 267
[7] BROAD-BAND MONOLITHIC INTEGRATED POWER-AMPLIFIERS IN GALLIUM-ARSENIDE
DRIVER, MC
ELDRIDGE, GW
DEGENFORD, JE
[J]. MICROWAVE JOURNAL, 1982, 25 (11) : 87 - 94
[8] A BROAD-BAND DISSIPATIVE CORRECTION NETWORK FOR MICROWAVE TRANSISTOR POWER-AMPLIFIERS
GOVORUKHIN, VI
GROMIKO, AV
IVLEV, BI
[J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1982, 25 (10): : 99 - 100
[9] BROAD-BAND HEMT AND GAAS-FET AMPLIFIERS FOR 18.0 TO 26.5 GHZ
SHIBATA, K
[J]. MICROWAVES & RF, 1985, 24 (05) : 186 - &
[10] THE CONSTRUCTION OF BROAD-BAND MOS FET AMPLIFIERS
GOLOVKOV, AA
PIVOVAROV, IY
[J]. TELECOMMUNICATIONS AND RADIO ENGINEERING, 1982, 36-7 (11) : 50 - 54

← 1 2 3 4 5 →