FRACTIONAL QUANTUM EFFECT IN TRANSPORT ALONG THE GAAS-ALXGA1-XAS INTERFACE

被引：0
|
作者：
TSUI, DC
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 03期
关键词：
D O I：
10.1116/1.582844
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：596 / 596
页数：1
相关论文
共 50 条
  • [1] MULTISUBBAND ELECTRON-TRANSPORT IN GAAS-ALXGA1-XAS QUANTUM WELLS
    DARLING, RB
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) : 1628 - 1640
  • [2] CALCULATION OF HOLE SUBBANDS AT THE GAAS-ALXGA1-XAS INTERFACE
    EKENBERG, U
    ALTARELLI, M
    [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3569 - 3570
  • [3] PARABOLIC QUANTUM WELLS WITH THE GAAS-ALXGA1-XAS SYSTEM
    MILLER, RC
    GOSSARD, AC
    KLEINMAN, DA
    MUNTEANU, O
    [J]. PHYSICAL REVIEW B, 1984, 29 (06): : 3740 - 3743
  • [4] RADIATIVE RECOMBINATION IN GAAS-ALXGA1-XAS QUANTUM DOTS
    WANG, PD
    TORRES, CMS
    BENISTY, H
    WEISBUCH, C
    BEAUMONT, SP
    [J]. APPLIED PHYSICS LETTERS, 1992, 61 (08) : 946 - 948
  • [5] EXCITONIC TRANSITIONS IN GAAS-ALXGA1-XAS MULTIPLE QUANTUM WELLS AFFECTED BY INTERFACE ROUGHNESS
    ZHOU, P
    JIANG, HX
    BANNWART, R
    SOLIN, SA
    BAI, G
    [J]. PHYSICAL REVIEW B, 1989, 40 (17): : 11862 - 11867
  • [6] QUANTUM TRANSPORT IN QUASI-ONE-DIMENSIONAL GAAS-ALXGA1-XAS HETEROSTRUCTURE DEVICES
    CHANG, AM
    TIMP, G
    HOWARD, RE
    BEHRINGER, RE
    MANKIEWICH, PM
    CUNNINGHAM, JE
    CHANG, TY
    CHELLURI, B
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1988, 4 (4-5) : 515 - 520
  • [7] Binding energy of biexcitons in GaAs-AlxGa1-xAs quantum wells
    Liu, JJ
    Kong, XJ
    Liu, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) : 2638 - 2642
  • [8] PHOTOCONDUCTIVITY ON GAAS-ALXGA1-XAS HETEROSTRUCTURES
    STEIN, D
    EBERT, G
    VONKLITZING, K
    WEIMANN, G
    [J]. SURFACE SCIENCE, 1984, 142 (1-3) : 406 - 411
  • [9] PHONONS IN GAAS-ALXGA1-XAS SUPERLATTICES
    MENENDEZ, J
    [J]. JOURNAL OF LUMINESCENCE, 1989, 44 (4-6) : 285 - 314
  • [10] SURFACE AND INTERFACE PROXIMITY EFFECT ON QUANTUM WELL ELECTRON MOBILITIES IN MODULATION DOPED GAAS-ALXGA1-XAS HETEROSTRUCTURES
    WANG, WI
    DANDEKAR, N
    WOOD, CEC
    EASTMAN, LF
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 576 - 577
12345