PREPARATION AND CHARACTERIZATION OF ZNO FILMS BY AN EVAPORATING METHOD

被引:25
|
作者
MA, J
JI, F
MA, HL
LI, SY
机构
[1] Institute of Optoelectronic Materials and Devices, Shandong University, Jinan
关键词
D O I
10.1116/1.579449
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This article describes the preparation of ZnO films by thermal evaporation of zinc acetate [Zn(CH3C00)22H20] onto a heated glass substrate. The structure and optical and electrical properties of the deposited films are investigated. Highly transparent films with conductivity as high as 1.3 X102 O-1 cm-1 can be produced by controlling the deposition parameters. Heat treatment in hydrogen significantly increases the conductivity of these ZnO films by more than six orders of magnitude. The energy gap of ZnO film was evaluated as about 3.3 eV from optical absorption measurements. The electron carrier densities are in the range 1.2-4X1019 cm-3 with mobilities of 20–50 cm2 V-1 s-1. © 1995, American Vacuum Society. All rights reserved.
引用
收藏
页码:92 / 94
页数:3
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