RESIDUAL LATTICE DAMAGE IN B AND BF2 IMPLANTED AND ANNEALED P-CHANNEL MOSFET STRUCTURES

被引：0
|
作者：
FICHTNER, W [1 ]
LEVIN, RM [1 ]
SHENG, TT [1 ]
MARCUS, RB [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C102 / C102
页数：1
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