EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：19

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作者：

ITO, H

ISHIBASHI, T

SUGETA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

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D O I：

10.1143/JJAP.23.L635

中图分类号：

O59 [应用物理学];

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页码：L635 / L637

页数：3

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