ELECTRICAL CHARACTERISTICS OF EPITAXIAL P+-N-N+ STRUCTURES MADE OF THE 6H POLYTYPE OF SILICON-CARBIDE

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作者：

ANIKIN, MM

LEBEDEV, AA

POPOV, IV

RASTEGAEV, VP

STRELCHUK, AM

SYRKIN, AL

TAIROV, YM

TSVETKOV, VF

CHELNOKOV, VE

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1988年 / 22卷 / 02期

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：181 / 183

页数：3

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