ELLIPSOMETRIC STUDIES OF SPUTTERED SILICON-NITRIDE ON N-GAAS

被引：1

|

作者：

PENG, YK

BUABBUD, G

ALTEROVITZ, SA

WOOLLAM, JA

BAYRAKTAROGULU, B

LANGER, D

LIU, D

HAUGLAND, E

机构：

[1] UNIV NEBRASKA,DEPT ELECT ENGN,LINCOLN,NE 68588

[2] AVIONICS LAB,ELECTR RES BRANCH,DAYTON,OH 45431

[3] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：713 / 714

页数：2

相关论文

共 50 条

[1] GAAS DEVICE PASSIVATION USING SPUTTERED SILICON-NITRIDE
CHANG, EY
CIBUZAR, GT
VANHOVE, JM
NAGARAJAN, RM
PANDE, KP
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (17) : 1638 - 1640
[2] CHARACTERIZATION OF REACTIVELY SPUTTERED SILICON-NITRIDE
MATSUZAKI, K
HIRABAYASHI, A
SAGA, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (11) : 3259 - 3263
[3] SILICON-NITRIDE FILMS ON GAAS
SCHUERMEYER, FL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : C78 - C78
[4] Reactively sputtered titanium nitride Schottky contacts on n-GaAs and their thermal stability
Eftekhari, G
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1996, 11 (03) : 285 - 288
[5] SPUTTERED SILICON-NITRIDE COATINGS FOR WEAR PROTECTION
GRILL, A
ARON, PR
[J]. THIN SOLID FILMS, 1982, 96 (01) : 25 - 30
[6] DIELECTRIC BREAKDOWN OF REACTIVELY SPUTTERED SILICON-NITRIDE
ROTHEMUND, W
FRITZSCHE, CR
[J]. THIN SOLID FILMS, 1973, 15 (02) : 199 - 205
[7] INTERFACE INSTABILITY OF RF SPUTTERED SILICON-NITRIDE FILMS ON SILICON
CHEN, PCY
[J]. THIN SOLID FILMS, 1974, 21 (02) : 245 - 253
[8] INFRARED STUDIES OF SILICON-NITRIDE
ERMER, E
PTAK, WS
[J]. JOURNAL OF MOLECULAR STRUCTURE, 1986, 143 : 5 - 8
[9] MAGNETRON SPUTTERED GOLD CONTACTS ON N-GAAS
BUONAQUISTI, AD
MATSON, RJ
RUSSELL, PE
HOLLOWAY, PH
[J]. SURFACE AND INTERFACE ANALYSIS, 1984, 6 (06) : 279 - 281
[10] PROPERTIES OF MAGNETRON-SPUTTERED SILICON-NITRIDE FILMS
SERIKAWA, T
OKAMOTO, A
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2928 - 2933

← 1 2 3 4 5 →