IMPURITY BANDS AND BAND TAILING IN MODERATELY DOPED SILICON

被引：24

|

作者：

LOWNEY, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 06期

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D O I：

10.1063/1.336389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2048 / 2053

页数：6

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