CARRIER DIFFUSION EFFECTS IN TIME-RESOLVED PHOTOLUMINESCENCE

被引：8
|
作者：
BAILEY, DW [1 ]
STANTON, CJ [1 ]
机构：
[1] UNIV FLORIDA,DEPT PHYS,GAINESVILLE,FL 32611
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 07期
关键词：
D O I：
10.1063/1.106492
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We model time-resolved photoluminescence in GaAs using an ensemble Monte Carlo method coupled with a k.p calculation of the band structure. We show that on a picosecond scale, carrier diffusion perpendicular to the layer significantly reduces the density at the surface and consequently has a first-order effect on luminescence measurements. To illustrate this we compare the calculated luminescence, with and without diffusion, to experimental data.
引用
收藏
页码：880 / 882
页数：3
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