THE OXIDATION-KINETICS OF THIN POLYCRYSTALLINE SILICON FILMS

The oxidation dynamics and morphology of undoped and heavily phosphorus-doped polycrystalline silicon films oxidized at a wide temperature and time range in dry and wet O2 atmosphere have been investigated. It is shown that the oxidation rates of polycrystalline silicon films are different from that of single-crystal silicon when the oxidation temperature is below 1000-degrees-C. There is a characteristic oxidation time, t(c), under which the undoped polysilicon oxide is not only thicker than that of (100)-oriented single-crystal silicon, but also thicker than that of (111)-oriented single-crystal silicon. For phosphorus-doped polycrystalline silicon films, the oxide thickness is thinner not only than that of (111)-oriented, single-crystal silicon, but also thinner than that of (100)-oriented, single-crystal silicon. According to TEM cross-sectional studies, these characteristics are due to the enhanced oxidation at grain boundaries of polycrystalline silicon films. A stress-enhanced oxidation model has been proposed and used to explain successfully the enhanced oxidation at grain boundaries of polycrystalline silicon films. Using this model, the oxidation linear rate constant of polysilicon (B/A)poly has been calculated and used in the modeling of the oxidation dynamics. The model results are in good agreement with the experimental data over the entire temperature and time ranges studied.