LOWER TEMPERATURE POSTANNEALING OF THIN-FILMS OF YBA2CU3O7 AT LOWER OXYGEN PARTIAL-PRESSURE

被引：41
|
作者：
MOGROCAMPERO, A
TURNER, LG
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 04期
关键词：
D O I：
10.1063/1.104654
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin films of YBa2Cu3O7 formed by ambient temperature deposition and furnace post-annealing have been obtained at annealing temperatures around 750-degrees-C and an oxygen partial pressure of 29 Pa. The zero resistance transition temperature of these smooth films on LaAlO3 was 89 K, and a critical current density in excess of 1 MA cm-2 at 77 K was found by transport measurements.
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页码：417 / 418
页数：2
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