NEW MODEL OF ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION OF SILICON

被引：11
|
作者：
WANG, ZL [1 ]
ITOH, N [1 ]
MATSUNAMI, N [1 ]
机构：
[1] NAGOYA UNIV,FAC ENGN,DEPT CRYSTALLINE MAT SCI,CHIKUSA KU,NAGOYA 46401,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 08期
关键词：
D O I：
10.1063/1.110951
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new model for ion-induced crystallization and amorphization at the interface is presented. The model is based on the general concept for ion-induced processes between two solid phases with different free energies; the presence of pure ballistic and thermally enhanced processes. The parameters that can fit quantitatively to the temperature, flux, and stopping power dependencies of crystallization/amorphization rates for Si are obtained.
引用
收藏
页码：1000 / 1002
页数：3
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